Vishay TrenchFET N channel-Channel MOSFET, 161 A, 150 V Enhancement, 8-Pin PowerPack SIEH3716EW-T1-GE3
- RS Stock No.:
- 931-771
- Mfr. Part No.:
- SIEH3716EW-T1-GE3
- Manufacturer:
- Vishay
N
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | SGD9.63 |
| 10 - 49 | SGD5.97 |
| 50 - 99 | SGD3.63 |
| 100 + | SGD3.53 |
*price indicative
- RS Stock No.:
- 931-771
- Mfr. Part No.:
- SIEH3716EW-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 161A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPack | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0062Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 417W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | ROHS | |
| Length | 8mm | |
| Width | 8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 161A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPack | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0062Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 417W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals ROHS | ||
Length 8mm | ||
Width 8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Vishay high-performance N-Channel MOSFET designed for efficient power management in electronic applications, delivering robust performance in demanding conditions.
TrenchFET Gen III technology for improved efficiency
Excellent thermal performance with low R DS(on) values
Rated for continuous drain current up to 161 A
Fully lead (Pb)-free and halogen-free design ensures compliance
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