Vishay E Series N channel-Channel MOSFET, 12 A, 600 V Enhancement, 4-Pin PowerPack SIHH240N60E-T1-FE3
- RS Stock No.:
- 931-766
- Mfr. Part No.:
- SIHH240N60E-T1-FE3
- Manufacturer:
- Vishay
N
This image is representative of the product range
Get a bulk buy discount
Add 10 more to save 34%
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
SGD5.03
(exc. GST)
SGD5.48
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
New product - Preorder today
- Shipping from 19 July 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape | Saving |
|---|---|---|
| 1 - 9 | SGD5.03 | - |
| 10 - 24 | SGD3.27 | 34% |
| 25 - 99 | SGD1.95 | 61% |
| 100 - 499 | SGD1.89 | 62% |
| 500 + | SGD1.85 | 63% |
*price indicative
- RS Stock No.:
- 931-766
- Mfr. Part No.:
- SIHH240N60E-T1-FE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPack | |
| Series | E Series | |
| Mount Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.24Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | ROHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPack | ||
Series E Series | ||
Mount Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.24Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals ROHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Power MOSFET designed for efficient power management in demanding applications, ensuring optimal performance and reliability with Advanced technology integration.
Utilises fourth generation E series technology for enhanced efficiency
Low figure-of-merit significantly reduces energy losses
Avalanche rated enhancing reliability in critical applications
Features a low effective capacitance for Rapid switching speeds
Boasts reduced switching and conduction losses for superior thermal performance
Related links
- Vishay E Series N channel-Channel MOSFET 600 V Enhancement, 4-Pin PowerPack SIHH120N60E-T1-FE3
- Vishay E N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH240N60E-T1-GE3
- Vishay EF Series N channel-Channel MOSFET 600 V Enhancement, 4-Pin PowerPack SIHH186N60EF-T1FE3
- Vishay E Series N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH075N65E-T1-GE3
- Vishay E Series N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247AD SIHL040N65E-GE3
- Vishay E Series N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247AD SIHL026N65E-GE3
- Vishay E Series N-Channel MOSFET 600 V Enhancement, 4-Pin TO-247AD SIHL039N60E-GE3
- Vishay E Series N-Channel MOSFET 600 V Enhancement, 4-Pin TO-247AD SIHL023N60E-GE3