Vishay EF Series N channel-Channel MOSFET, 16 A, 600 V Enhancement, 4-Pin PowerPack SIHH186N60EF-T1FE3
- RS Stock No.:
- 931-765
- Mfr. Part No.:
- SIHH186N60EF-T1FE3
- Manufacturer:
- Vishay
N
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- RS Stock No.:
- 931-765
- Mfr. Part No.:
- SIHH186N60EF-T1FE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | EF Series | |
| Package Type | PowerPack | |
| Mount Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.193Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 114W | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | ROHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series EF Series | ||
Package Type PowerPack | ||
Mount Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.193Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 114W | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals ROHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay power MOSFET designed to deliver exceptional performance in high-efficiency applications, featuring a fast body diode and outstanding switching characteristics for improved reliability in demanding environments.
Low figure-of-merit (FOM) for enhanced energy efficiency
Avalanche energy rated and capable of handling high-energy pulses
Maintains low effective capacitance for Faster switching speeds
Kelvin connection reduces parasitic effects for improved performance
High-temperature performance with a maximum operating junction temperature of +150 °C
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