Vishay E Series N channel-Channel MOSFET, 65 A, 650 V Enhancement, 4-Pin TO-247AD SIHL040N65E-GE3
- RS Stock No.:
- 735-229
- Mfr. Part No.:
- SIHL040N65E-GE3
- Manufacturer:
- Vishay
N
Bulk discount available
Subtotal (1 unit)*
SGD19.80
(exc. GST)
SGD21.58
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 27 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | SGD19.80 |
| 5 + | SGD19.41 |
*price indicative
- RS Stock No.:
- 735-229
- Mfr. Part No.:
- SIHL040N65E-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AD | |
| Series | E Series | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.04Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 391W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5.21mm | |
| Width | 16.13 mm | |
| Length | 23.6mm | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AD | ||
Series E Series | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.04Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 391W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Height 5.21mm | ||
Width 16.13 mm | ||
Length 23.6mm | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Related links
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AD SIHW040N65E-GE3
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 4-Pin TO-247AD SIHL026N65E-GE3
- Vishay E Series N channel-Channel MOSFET 600 V Enhancement, 4-Pin TO-247AD SIHL023N60E-GE3
- Vishay E Series N channel-Channel MOSFET 600 V Enhancement, 4-Pin TO-247AD SIHL039N60E-GE3
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH075N65E-T1-GE3
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-263 SIHB240N65E-GE3
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG026N65E-GE3
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-247AC SIHG100N65E-GE3