Infineon OptiMOS N-Channel Power MOSFET, 193 A, 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7N013ATMA2

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SGD1.87

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SGD2.04

(inc. GST)

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Units
Per unit
1 - 24SGD1.87
25 - 99SGD1.60
100 - 499SGD1.18
500 - 999SGD0.95
1000 +SGD0.92

*price indicative

RS Stock No.:
762-930
Mfr. Part No.:
IAUZN04S7N013ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

193A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS

Package Type

Tape & Reel

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.33mΩ

Channel Mode

Enhancement

Forward Voltage Vf

950mV

Maximum Power Dissipation Pd

94W

Typical Gate Charge Qg @ Vgs

37nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Width

2.29mm

Length

2.29mm

Height

1.1mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
The Infineon Automotive MOSFET Power-Transistor is an N-channel, enhancement-mode MOSFET designed for automotive applications. It operates in high-temperature conditions and features robust construction. Extended qualification beyond AEC-Q101.

Enhanced electrical testing

Robust design

RoHS compliant

100% Avalanche tested

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