Infineon OptiMOS N channel-Channel Power MOSFET, 199 A, 40 V Enhancement, 8-Pin Tape & Reel IAUZN04S7L012ATMA1

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SGD1.18

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SGD1.29

(inc. GST)

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1 - 24SGD1.18
25 - 99SGD1.01
100 - 499SGD0.75
500 - 999SGD0.60
1000 +SGD0.58

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RS Stock No.:
762-929
Mfr. Part No.:
IAUZN04S7L012ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

199A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS

Package Type

Tape & Reel

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

1.25mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

94W

Typical Gate Charge Qg @ Vgs

42nC

Forward Voltage Vf

0.95V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Height

1.1mm

Length

2.29mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
The Infineon Automotive MOSFET Power-Transistor is an N-channel, enhancement-mode MOSFET designed for automotive applications. It operates in high-temperature conditions and features robust construction. Extended qualification beyond AEC-Q101.

Enhanced electrical testing

Robust design

RoHS compliant

100% Avalanche tested

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