Infineon CoolSiC N channel-Channel Power MOSFET, 28 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R075M2HXTMA1
- RS Stock No.:
- 762-918
- Mfr. Part No.:
- IMBG65R075M2HXTMA1
- Manufacturer:
- Infineon
N
Bulk discount available
Subtotal (1 unit)*
SGD7.11
(exc. GST)
SGD7.75
(inc. GST)
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- Shipping from 08 June 2026
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Units | Per unit |
|---|---|
| 1 - 9 | SGD7.11 |
| 10 - 49 | SGD5.76 |
| 50 - 99 | SGD4.41 |
| 100 + | SGD3.53 |
*price indicative
- RS Stock No.:
- 762-918
- Mfr. Part No.:
- IMBG65R075M2HXTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO263-7 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 124W | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15mm | |
| Height | 4.5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO263-7 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 124W | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 15mm | ||
Height 4.5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.
Ultra‑low switching losses
Enhances system robustness and reliability
Facilitates great ease of use and integration
Reduces the size, weight and bill of materials of the systems
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