Infineon CoolSiC N-Channel MOSFET, 238 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R007M2HXTMA1

RS Stock No.:: 349-322
Mfr. Part No.:: IMBG65R007M2HXTMA1
Manufacturer:: Infineon

Infineon CoolSiC N-Channel MOSFET, 238 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R007M2HXTMA1

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Units	Per unit
1 - 9	SGD59.32
10 - 99	SGD53.39
100 +	SGD49.24

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RS Stock No.:: 349-322
Mfr. Part No.:: IMBG65R007M2HXTMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	238A
	Maximum Drain Source Voltage Vds	650V
	Series	CoolSiC
	Package Type	PG-TO263-7
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	8.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	179nC
	Maximum Gate Source Voltage Vgs	23V
	Maximum Power Dissipation Pd	789W
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 238A
	Maximum Drain Source Voltage Vds 650V
	Series CoolSiC
	Package Type PG-TO263-7
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 8.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 179nC
	Maximum Gate Source Voltage Vgs 23V
	Maximum Power Dissipation Pd 789W
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMBG65R007M2HXTMA1

COO (Country of Origin):: MY

Infineon CoolSiC Series MOSFET, 650V Maximum Drain Source Voltage, 238A Maximum Continuous Drain Current - IMBG65R007M2HXTMA1

This MOSFET is a silicon carbide, N-channel enhancement device designed for high-voltage switching and power conversion tasks. It operates across a wide ambient range, making it suitable for demanding thermal environments, and is supplied in a surface-mount power package for integration into compact assemblies.

Features and Benefits:

• 650V drain rating enables high-voltage switching applications
• 8.5mΩ Rds(on) delivers low conduction losses for efficiency
• 238A continuous drain current supports heavy current loads
• 789W maximum power dissipation handles significant thermal stress
• 179nC typical gate charge permits predictable gate-drive requirements
• PG-TO263-7 surface-mount package eases PCB assembly for mass production

Applications

• Suitable for inverters in industrial power systems
• Ideal for high-power motor drives and traction converters
• Used with renewable-energy converters and power optimisers
• Can be used for high-voltage DC-DC conversion stages
• Employed in uninterruptible power supplies and grid-tied systems

What thermal range can it tolerate in harsh installations?

It is rated to function from -55°C up to 175°C, allowing operation in extreme temperature environments.

What gate-drive constraints should be observed for safe operation?

Gate-to-source voltage must not exceed 23V to avoid stressing the gate structure.

How many pins does the package present for PCB layout considerations?

The component uses a seven-pin configuration that suits standard surface-mount placement.

Is this device suitable for automotive-specific certification requirements?

It is not classified under automotive-grade standards but is RoHS compliant.