Infineon CoolSiC N-Channel Power MOSFET, 65 A, 400 V Enhancement, 3-Pin TO-247 IMW40R025M2HXKSA1

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SGD15.70

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SGD17.11

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Units
Per unit
1 - 9SGD15.70
10 - 49SGD12.73
50 - 99SGD9.72
100 +SGD7.78

*price indicative

RS Stock No.:
762-903
Mfr. Part No.:
IMW40R025M2HXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

400V

Series

CoolSiC

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

25.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

36nC

Maximum Power Dissipation Pd

195W

Maximum Gate Source Voltage Vgs

25V

Forward Voltage Vf

4.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

20.8mm

Width

15.7mm

Height

4.83mm

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon CoolSiC MOSFET is Ideal for high frequency switching and synchronous rectific and features Benchmark gate threshold voltage. Additionally it features XT interconnection technology for best‑in‑class thermal performance.

100% avalanche tested

Recommended gate driving voltage

Qualified for industrial applications

Used for energy storage, UPS and battery formation

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