Infineon CoolSiC N-Channel Power MOSFET, 65 A, 1.4 kV Enhancement, 4-Pin TO-247-4 IMZC140R029M2HXKSA1
- RS Stock No.:
- 762-926
- Mfr. Part No.:
- IMZC140R029M2HXKSA1
- Manufacturer:
- Infineon
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SGD20.03
(exc. GST)
SGD21.83
(inc. GST)
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Units | Per unit |
|---|---|
| 1 - 9 | SGD20.03 |
| 10 - 24 | SGD18.02 |
| 25 + | SGD14.82 |
*price indicative
- RS Stock No.:
- 762-926
- Mfr. Part No.:
- IMZC140R029M2HXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 1.4kV | |
| Package Type | TO-247-4 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 288W | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Length | 23.5mm | |
| Width | 16mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 1.4kV | ||
Package Type TO-247-4 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 288W | ||
Maximum Gate Source Voltage Vgs 23V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Length 23.5mm | ||
Width 16mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC 1400 V SiC MOSFET G2 is a Silicon Carbide MOSFET with .XT interconnection technology. It uses .XT interconnection technology for best-in-class thermal performance and robust body diode for hard commutation.
High-temperature operation
Suitable for hard commutation
Reliable thermal management
Enhanced performance
Increased efficiency
Optimized gate drive
Suitable for power electronics
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