onsemi UF3 Type N-Channel Single MOSFETs, 7.6 A, 1200 V Enhancement, 3-Pin TO-247-3 UF3C120400K3S
- RS Stock No.:
- 648-529
- Mfr. Part No.:
- UF3C120400K3S
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 bag of 2 units)*
SGD37.50
(exc. GST)
SGD40.88
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 600 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Bag* |
|---|---|---|
| 2 - 8 | SGD18.75 | SGD37.50 |
| 10 + | SGD18.375 | SGD36.75 |
*price indicative
- RS Stock No.:
- 648-529
- Mfr. Part No.:
- UF3C120400K3S
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.6A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247-3 | |
| Series | UF3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 515mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.03mm | |
| Length | 20.96mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.6A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247-3 | ||
Series UF3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 515mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.03mm | ||
Length 20.96mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CH
The ON Semiconductor EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and super junction devices. Ideal for switching inductive loads.
On-resistance RDS(on)
Maximum operating temperature of 175 °C
Excellent Reverse Recover
Low Gate Charge
Related links
- Infineon CoolMOS Type N-Channel Single MOSFETs 600 V Enhancement, 3-Pin PG-TO-247-3 IPW60R120CM8XKSA1
- ROHM R8019KNZ4 Type N-Channel Single MOSFETs 3-Pin TO-247 R8019KNZ4C13
- ROHM R8011KNZ4 Type N-Channel Single MOSFETs 3-Pin TO-247 R8011KNZ4C13
- Infineon CoolMOS 8 Type N-Channel Single MOSFETs 600 V Enhancement, 4-Pin TO-247-4 IPZA60R070CM8XKSA1
- ROHM SCT4036KWA Type N-Channel Single MOSFETs 1200 V Enhancement, 8-Pin TO-263-7LA SCT4036KWATL
- ROHM SCT4018KWA Type N-Channel Single MOSFETs 1200 V Enhancement, 8-Pin TO-263-7LA SCT4018KWATL
- ROHM RJ1 Type N-Channel Single MOSFETs 3-Pin TO-263AB RJ1R04BBHTL1
- Vishay EF Type N-Channel Single MOSFETs 800 V Enhancement, 3-Pin TO-247AC SIHG11N80AEF-GE3