ROHM SCT4036KWA N-Channel Single MOSFETs, 40 A, 1.2 kV Enhancement, 8-Pin TO-263-7LA SCT4036KWATL
- RS Stock No.:
- 687-344
- Mfr. Part No.:
- SCT4036KWATL
- Manufacturer:
- ROHM
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SGD37.24
(exc. GST)
SGD40.60
(inc. GST)
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In Stock
- Plus 1,000 unit(s) shipping from 26 October 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 8 | SGD18.62 | SGD37.24 |
| 10 + | SGD18.07 | SGD36.14 |
*price indicative
- RS Stock No.:
- 687-344
- Mfr. Part No.:
- SCT4036KWATL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | SCT4036KWA | |
| Package Type | TO-263-7LA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 21V | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 10.2mm | |
| Length | 15.4mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series SCT4036KWA | ||
Package Type TO-263-7LA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 21V | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 10.2mm | ||
Length 15.4mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The ROHM N channel SiC power MOSFET, engineered for high-performance applications requiring efficient switching capabilities. With a maximum drain-source voltage of 1200V and a typical on-resistance of 36mΩ, this device excels in demanding environments like solar inverters and DC/DC converters. Its robust design features a high continuous drain current rating of 40A at 25°C, supporting versatility in various applications. The device is optimised for fast switching, providing enhanced efficiency. Additionally, its Pb-free lead plating complies with RoHS standards, ensuring an eco-friendly approach without compromising on performance.
Delivers low on resistance for minimal power loss during operation
Supports a wide range of continuous and pulsed drain currents for enhanced flexibility in design
Optimised for fast switching speeds, contributing to improved overall efficiency
Features robust thermal resistance capabilities, allowing for reliable operation at elevated temperatures
Incorporates a simple gate drive design, facilitating easier integration into existing systems
Compliant with environmental regulations through Pb free lead plating, aligning with contemporary sustainability practices
Offers a wide creepage distance of 4.7mm, enhancing reliability in high-voltage applications
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