N-Channel MOSFET, 60 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCTW60N120G2

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.

Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability

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