Infineon IQD0 Type N-Channel MOSFET, 151 A, 150 V Enhancement, 8-Pin PG-WHSON-8 IQD063N15NM5SCATMA1
- RS Stock No.:
- 351-914
- Mfr. Part No.:
- IQD063N15NM5SCATMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 2 units)*
SGD17.66
(exc. GST)
SGD19.24
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 4,970 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | SGD8.83 | SGD17.66 |
| 20 - 198 | SGD7.95 | SGD15.90 |
| 200 - 998 | SGD7.33 | SGD14.66 |
| 1000 - 1998 | SGD6.80 | SGD13.60 |
| 2000 + | SGD6.095 | SGD12.19 |
*price indicative
- RS Stock No.:
- 351-914
- Mfr. Part No.:
- IQD063N15NM5SCATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PG-WHSON-8 | |
| Series | IQD0 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.32mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 333W | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.75mm | |
| Standards/Approvals | RoHS, JEDEC, Halogen‐Free According to IEC61249‐2‐21 | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PG-WHSON-8 | ||
Series IQD0 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.32mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 333W | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Operating Temperature 175°C | ||
Height 0.75mm | ||
Standards/Approvals RoHS, JEDEC, Halogen‐Free According to IEC61249‐2‐21 | ||
Length 5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon Power MOSFET comes with a low RDS(on) of 6,32 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.
Cutting edge 150 V silicon technology
Outstanding FOMs
Improved thermal performance
Ultra-low parasitic
Maximized chip or package ratio
Related links
- Infineon IQD0 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-WHSON-8 IQD020N10NM5SCATMA1
- Infineon IQD0 Type N-Channel MOSFET 150 V Enhancement, 9-Pin PG-WHTFN-9 IQD063N15NM5CGSCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1
- Infineon IQD0 Type N-Channel MOSFET 100 V Enhancement, 9-Pin PG-WHTFN-9 IQD020N10NM5CGSCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-WHSON-8 IQE030N06NM5SCATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 25 V Enhancement, 8-Pin PG-WHSON-8 IQDH29NE2LM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1