Infineon OptiMOS N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1
- RS Stock No.:
- 284-774
- Mfr. Part No.:
- IQE050N08NM5SCATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
SGD25.90
(exc. GST)
SGD28.25
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 100 unit(s) shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD5.18 | SGD25.90 |
| 50 - 95 | SGD4.92 | SGD24.60 |
| 100 - 495 | SGD4.558 | SGD22.79 |
| 500 - 995 | SGD4.192 | SGD20.96 |
| 1000 + | SGD4.038 | SGD20.19 |
*price indicative
- RS Stock No.:
- 284-774
- Mfr. Part No.:
- IQE050N08NM5SCATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PG-WHSON-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 100W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PG-WHSON-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 100W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor, rated at 80V, is specifically designed to enhance the efficiency and performance of modern electronic applications. It excels in providing superior synchronous rectification, ensuring minimal energy losses and maximising overall system reliability. Thanks to its low on resistance and exceptional thermal management, this transistor is Ideal for demanding industrial applications, making it a preferred choice for engineers aiming for performance optimisation. With extensive avalanche testing and robust construction, it promises longevity in severe environments and aligns with global RoHS standards, ensuring a strong commitment to safety and sustainability.
Optimised for synchronous rectification
N channel for easy circuit integration
Low on resistance reduces heat generation
Exceptional thermal resistance prevents overheating
100% avalanche tested for reliability
Pb free lead plating for eco friendly manufacturing
Halogen free construction meets regulations
Related links
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-WHSON-8 IQE030N06NM5SCATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 25 V Enhancement, 8-Pin PG-WHSON-8 IQDH29NE2LM5SCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TSON-8 IQE046N08LM5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 8-Pin PG-WHSON-8 IQE065N10NM5SCATMA1