Infineon IPT0 Type N-Channel MOSFET, 321 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT017N10NM5LF2ATMA1
- RS Stock No.:
- 351-906
- Mfr. Part No.:
- IPT017N10NM5LF2ATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD18.79
(exc. GST)
SGD20.482
(inc. GST)
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In Stock
- 1,990 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | SGD9.395 | SGD18.79 |
| 20 - 198 | SGD8.46 | SGD16.92 |
| 200 + | SGD7.80 | SGD15.60 |
*price indicative
- RS Stock No.:
- 351-906
- Mfr. Part No.:
- IPT017N10NM5LF2ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 321A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPT0 | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 165nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.58mm | |
| Width | 10.1 mm | |
| Standards/Approvals | Halogen-Free (IEC61249-2-21), RoHS, JEDEC | |
| Height | 1.30mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 321A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPT0 | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 165nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Length 10.58mm | ||
Width 10.1 mm | ||
Standards/Approvals Halogen-Free (IEC61249-2-21), RoHS, JEDEC | ||
Height 1.30mm | ||
Automotive Standard No | ||
The Infineon Infineon’s best-in-class OptiMOS 5 Linear FET 2 100 V in TO-Leadless (TOLL), offering the industry’s lowest RDS(on) and wide SOA at 25˚C. The combination of the OptiMOS 5 Linear FET 2 technology and the TOLL package, It is designed to provide highest power density, for inrush current protection applications such as hot-swap, e-fuse, and within battery protection in Battery management systems (BMS).
Wide safe operating area (SOA)
Low RDS(on)
Lower IGSS compared to Linear FET
Optimized transfer characteristic
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