Infineon IPT N-Channel MOSFET, 313 A, 60 V Enhancement, 8-Pin PG-HSOF-8 IPT012N06NATMA1
- RS Stock No.:
- 273-5352
- Mfr. Part No.:
- IPT012N06NATMA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
SGD7.89
(exc. GST)
SGD8.60
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 90 unit(s) shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 49 | SGD7.89 |
| 50 - 99 | SGD6.57 |
| 100 - 249 | SGD6.06 |
| 250 - 999 | SGD5.62 |
| 1000 + | SGD5.51 |
*price indicative
- RS Stock No.:
- 273-5352
- Mfr. Part No.:
- IPT012N06NATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 313A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 214W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 106nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC1, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 313A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-HSOF-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 214W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 106nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC1, RoHS | ||
Automotive Standard No | ||
The Infineon Power MOSFET is optimized for high current applications such as forklift, light electric vehicles, POL and telecom. This package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required. It is qualified according to JEDEC1 for target applications.
Halogen free
RoHS compliant
Pb free lead plating
Superior thermal resistance
100 percent avalanche tested
Related links
- Infineon IPT N-Channel MOSFET 60 V Enhancement, 8-Pin PG-HSOF-8 IPT012N06NATMA1
- Infineon IPT N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8 IPT029N08N5ATMA1
- Infineon IPT N-Channel Power Transistor 650 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT N-Channel Power MOSFET 0.82 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT N-Channel MOSFET 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T065S7XTMA1
- Infineon IPT N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8 IPT014N08NM5ATMA1
- Infineon IPT N-Channel MOSFET 200 V Enhancement, 8-Pin PG-HSOF-8 IPT129N20NM6ATMA1