Infineon IPT Type N-Channel MOSFET, 169 A, 80 V Enhancement, 8-Pin PG-HSOF-8
- RS Stock No.:
- 273-2794
- Mfr. Part No.:
- IPT029N08N5ATMA1
- Manufacturer:
- Infineon
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Subtotal (1 pack of 2 units)*
SGD13.35
(exc. GST)
SGD14.552
(inc. GST)
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In Stock
- 82 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | SGD6.675 | SGD13.35 |
| 50 - 98 | SGD6.065 | SGD12.13 |
| 100 - 248 | SGD5.555 | SGD11.11 |
| 250 - 998 | SGD5.125 | SGD10.25 |
| 1000 + | SGD4.77 | SGD9.54 |
*price indicative
- RS Stock No.:
- 273-2794
- Mfr. Part No.:
- IPT029N08N5ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 169A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | IPT | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 167W | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC1, IEC61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 169A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series IPT | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 167W | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC1, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel 80 V MOSFET and ideal for high frequency switching and synchronized rectification. It is qualified according to JEDEC for target applications. This MOSFET is fully qualified according to JEDEC for industrial applications and halogen free according to IEC61249 2 21.
RoHS compliant
Pb free lead plating
Excellent gate charge
Very low on resistance
100 percent avalanche tested
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