Infineon EasyPACK N-Channel MOSFET, 65 A, 1200 V Enhancement Tray F3L11MR12W2M1HPB19BPSA1
- RS Stock No.:
- 349-248
- Mfr. Part No.:
- F3L11MR12W2M1HPB19BPSA1
- Manufacturer:
- Infineon
Subtotal (1 unit)*
SGD475.50
(exc. GST)
SGD518.30
(inc. GST)
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In Stock
- Plus 18 unit(s) shipping from 05 October 2026
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Units | Per unit |
|---|---|
| 1 + | SGD475.50 |
*price indicative
- RS Stock No.:
- 349-248
- Mfr. Part No.:
- F3L11MR12W2M1HPB19BPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Tray | |
| Series | EasyPACK | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 20mW | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Forward Voltage Vf | 5.35V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747, IEC 60068, RoHS, IEC 60749 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Tray | ||
Series EasyPACK | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 20mW | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 23V | ||
Forward Voltage Vf 5.35V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747, IEC 60068, RoHS, IEC 60749 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyPACK 2B CoolSiC MOSFET 3 level module in NPC2 topology 1200 V, 11mΩ G1 with NTC, pre applied thermal interface material and PressFIT contact technology. The MOSFET features best in class packaging with a compact height of just 12 mm, designed for optimal performance in power electronics. It utilizes leading edge Wide Bandgap materials, enhancing its efficiency and reliability. The design incorporates very low module stray inductance, ensuring minimal power loss and improved switching behaviour.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
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