Infineon CoolSiC Trench MOSFET Type N-Channel MOSFET, 100 A, 1200 V Enhancement EasyPACK F48MR12W2M1HPB76BPSA1
- RS Stock No.:
- 348-971
- Mfr. Part No.:
- F48MR12W2M1HPB76BPSA1
- Manufacturer:
- Infineon
Subtotal (1 unit)*
SGD600.62
(exc. GST)
SGD654.68
(inc. GST)
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In Stock
- Plus 18 unit(s) shipping from 29 December 2025
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Units | Per unit |
|---|---|
| 1 + | SGD600.62 |
*price indicative
- RS Stock No.:
- 348-971
- Mfr. Part No.:
- F48MR12W2M1HPB76BPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | EasyPACK | |
| Series | CoolSiC Trench MOSFET | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 17.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 20mW | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 5.35V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type EasyPACK | ||
Series CoolSiC Trench MOSFET | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 17.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 20mW | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 5.35V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyPACK 2B CoolSiC MOSFET Fourpack Module is engineered for high performance power applications, incorporating best-in-class packaging with a compact 12 mm height for efficient space utilization. It features leading edge Wide Bandgap (WBG) material, which enhances power efficiency and thermal performance. With very low module stray inductance, this module minimizes power losses and improves switching speed for more efficient operation.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
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