Infineon FF11MR12W2M1HP_B11 Type N-Channel MOSFET, 75 A, 1200 V Enhancement EasyPACK FF11MR12W2M1HPB11BPSA1
- RS Stock No.:
- 348-976
- Mfr. Part No.:
- FF11MR12W2M1HPB11BPSA1
- Manufacturer:
- Infineon
Subtotal (1 unit)*
SGD291.77
(exc. GST)
SGD318.03
(inc. GST)
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In Stock
- Plus 18 unit(s) shipping from 29 December 2025
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Units | Per unit |
|---|---|
| 1 + | SGD291.77 |
*price indicative
- RS Stock No.:
- 348-976
- Mfr. Part No.:
- FF11MR12W2M1HPB11BPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | EasyPACK | |
| Series | FF11MR12W2M1HP_B11 | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 23.1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747, IEC 60068, IEC 60749 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type EasyPACK | ||
Series FF11MR12W2M1HP_B11 | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 23.1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747, IEC 60068, IEC 60749 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyDUAL 2B CoolSiC MOSFET Half-Bridge Module is engineered for high performance power applications, offering a best-in-class package with a compact 12 mm height. It leverages leading-edge Wide Bandgap (WBG) material, providing enhanced power efficiency and thermal performance. The module is designed with very low stray inductance, which minimizes power losses and improves switching speed.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
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