Infineon OptiMOS-TM6 Type N-Channel MOSFET, 230 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N013TATMA1
- RS Stock No.:
- 349-164
- Mfr. Part No.:
- IAUCN04S6N013TATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD13.45
(exc. GST)
SGD14.65
(inc. GST)
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In Stock
- Plus 2,000 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD2.69 | SGD13.45 |
| 50 - 95 | SGD2.558 | SGD12.79 |
| 100 - 495 | SGD2.368 | SGD11.84 |
| 500 - 995 | SGD2.18 | SGD10.90 |
| 1000 + | SGD2.098 | SGD10.49 |
*price indicative
- RS Stock No.:
- 349-164
- Mfr. Part No.:
- IAUCN04S6N013TATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 230A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS-TM6 | |
| Package Type | PG-LHDSO-10-1 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 1.68mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Power Dissipation Pd | 133W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 230A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS-TM6 | ||
Package Type PG-LHDSO-10-1 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 1.68mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Power Dissipation Pd 133W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Infineon Automotive MOSFET is an OptiMOS power MOSFET specifically designed for automotive applications. It is an N-channel, enhancement mode device with normal level characteristics. The MOSFET undergoes extended qualification beyond AEC-Q101 standards and features enhanced electrical testing, ensuring reliable performance. Its robust design makes it suitable for demanding automotive environments, offering durability and efficiency in power management.
MSL1 up to 260°C peak reflow
175°C operating temperature
RoHS compliant
Potential application
Related links
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