Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -19.6 A, 60 V Enhancement, 8-Pin PG-TDSON-8 ISC800P06LMATMA1
- RS Stock No.:
- 285-058
- Mfr. Part No.:
- ISC800P06LMATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 5 - 45 | SGD2.746 | SGD13.73 | - |
| 50 - 95 | SGD2.61 | SGD13.05 | SGD6.80 |
| 100 - 495 | SGD2.416 | SGD12.08 | SGD33.00 |
| 500 - 995 | SGD2.224 | SGD11.12 | SGD261.00 |
| 1000 + | SGD2.142 | SGD10.71 | SGD604.00 |
*price indicative
- RS Stock No.:
- 285-058
- Mfr. Part No.:
- ISC800P06LMATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -19.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS Power Transistor | |
| Package Type | PG-TDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -19.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS Power Transistor | ||
Package Type PG-TDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS power transistor redefines efficiency with its superior P channel technology designed for high performance applications. Boasting a breakdown voltage of 60V, it is engineered for robust industrial use, ensuring reliable performance under varying operational conditions. The unique SuperSO8 package facilitates an optimal thermal path for heat dissipation, enhancing the reliability and lifespan of the device. This transistor undergoes rigorous testing, including 100% avalanche testing, ensuring that it meets the highest standards of reliability and quality. With an industry leading low on resistance, it significantly reduces power losses, making it an excellent choice for energy conscious designs.
Very low on resistance improves efficiency
100% avalanche tested for reliability
Pb free lead plating for compliance
Halogen free construction supports eco friendliness
Logic level operation for easy interfacing
Suitable for diverse industrial applications
Excellent thermal characteristics ensure reliability
Enhancement mode design for stable performance
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