Infineon EasyDUAL Type N-Channel MOSFET, 50 A, 1200 V Enhancement, 23-Pin AG-EASY1B FF17MR12W1M1HB11BPSA1
- RS Stock No.:
- 284-821
- Mfr. Part No.:
- FF17MR12W1M1HB11BPSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 tray of 24 units)*
SGD3,864.696
(exc. GST)
SGD4,212.528
(inc. GST)
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In Stock
- 24 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 24 + | SGD161.029 | SGD3,864.70 |
*price indicative
- RS Stock No.:
- 284-821
- Mfr. Part No.:
- FF17MR12W1M1HB11BPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | AG-EASY1B | |
| Series | EasyDUAL | |
| Mount Type | Screw | |
| Pin Count | 23 | |
| Maximum Drain Source Resistance Rds | 34.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Forward Voltage Vf | 5.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 20mW | |
| Typical Gate Charge Qg @ Vgs | 0.149μC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type AG-EASY1B | ||
Series EasyDUAL | ||
Mount Type Screw | ||
Pin Count 23 | ||
Maximum Drain Source Resistance Rds 34.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Forward Voltage Vf 5.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 20mW | ||
Typical Gate Charge Qg @ Vgs 0.149μC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Automotive Standard No | ||
The Infineon MOSFET Module represents a significant advancement in power semiconductor technology, designed to meet the rigorous demands of high frequency switching applications. This innovative module incorporates CoolSiC trench MOSFETs, delivering unparalleled efficiency and reliability. With a robust design tailored for industrial applications, it ensures low switching losses and excellent thermal performance. The integrated PressFIT contact technology simplifies installation while maintaining a secure connection. This module is an Ideal choice for applications such as DC/DC converters and UPS systems, revolutionising energy management with its compact, Durable construction.
Low inductive design optimises dynamic performance
Integrated temperature sensor enhances safety
Rugged mounting ensures reliability in demanding environments
Qualified for industrial applications per IEC standards
Ideal for DC charging in electric vehicles
Streamlined installation with PressFIT technology
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