Infineon, N-Channel IGBT Module, 20 A 1.2 kV, 23-Pin EASY1B, Clamp
- RS Stock No.:
- 838-6973
- Mfr. Part No.:
- FP10R12W1T4B11BOMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Get a bulk buy discount
Add 10 more to save SGD15.10
View bulk pricing optionsSubtotal (1 unit)*
SGD50.70
(exc. GST)
SGD55.26
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 29 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Saving |
|---|---|---|
| 1 - 9 | SGD50.70 | - |
| 10 - 49 | SGD49.19 | SGD15.10 |
| 50 - 99 | SGD47.73 | SGD148.50 |
| 100 - 249 | SGD46.30 | SGD440.00 |
| 250 + | SGD44.90 | SGD1,450.00 |
*price indicative
- RS Stock No.:
- 838-6973
- Mfr. Part No.:
- FP10R12W1T4B11BOMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 20A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 105W | |
| Package Type | EASY1B | |
| Mount Type | Clamp | |
| Channel Type | N | |
| Pin Count | 23 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Operating Temperature | 150°C | |
| Height | 12mm | |
| Length | 48mm | |
| Standards/Approvals | No | |
| Width | 33.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 20A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 105W | ||
Package Type EASY1B | ||
Mount Type Clamp | ||
Channel Type N | ||
Pin Count 23 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Operating Temperature 150°C | ||
Height 12mm | ||
Length 48mm | ||
Standards/Approvals No | ||
Width 33.8mm | ||
Automotive Standard No | ||
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.