Infineon IAUZ Type N-Channel MOSFET, 100 A, 1200 V Enhancement, 8-Pin AG-EASY2B
- RS Stock No.:
- 250-0217
- Mfr. Part No.:
- F3L8MR12W2M1HPB11BPSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tray of 18 units)*
SGD3,126.996
(exc. GST)
SGD3,408.426
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 28 December 2026
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Units | Per unit | Per Tray* |
|---|---|---|
| 18 - 18 | SGD173.722 | SGD3,127.00 |
| 36 - 36 | SGD168.51 | SGD3,033.18 |
| 54 - 90 | SGD161.77 | SGD2,911.86 |
| 108 - 198 | SGD153.681 | SGD2,766.26 |
| 216 + | SGD144.461 | SGD2,600.30 |
*price indicative
- RS Stock No.:
- 250-0217
- Mfr. Part No.:
- F3L8MR12W2M1HPB11BPSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | AG-EASY2B | |
| Series | IAUZ | |
| Mount Type | Screw | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type AG-EASY2B | ||
Series IAUZ | ||
Mount Type Screw | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC MOSFET EasyPACK™ 2B 1200 V / 8 mΩ 3-Level module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor, pre-applied thermal interface material and PressFIT Contact Technology.
High current density
Low switching losses
Rugged mounting due to integrated mounting clamps
Integrated NTC temperature sensor
PressFIT contact technology
Pre-applied thermal interface material
Related links
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