Infineon OptiMOS 6 Power Transistor N-Channel MOSFET, 24 A, 120 V Enhancement, 8-Pin PG-TSDSON-8 ISZ330N12LM6ATMA1
- RS Stock No.:
- 284-798
- Mfr. Part No.:
- ISZ330N12LM6ATMA1
- Manufacturer:
- Infineon
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 10 - 90 | SGD1.48 | SGD14.80 | - |
| 100 - 240 | SGD1.406 | SGD14.06 | SGD7.40 |
| 250 - 490 | SGD1.302 | SGD13.02 | SGD44.50 |
| 500 - 990 | SGD1.198 | SGD11.98 | SGD141.00 |
| 1000 + | SGD1.154 | SGD11.54 | SGD326.00 |
*price indicative
- RS Stock No.:
- 284-798
- Mfr. Part No.:
- ISZ330N12LM6ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | OptiMOS 6 Power Transistor | |
| Package Type | PG-TSDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 43W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series OptiMOS 6 Power Transistor | ||
Package Type PG-TSDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 43W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon MOSFET is designed to meet the rigorous demands of modern electronic applications, boasting optimum efficiency and reliability. The Advanced OptiMOS 6 technology empowers this component to deliver exceptional performance across various operating conditions, ensuring it remains a TOP choice for engineers and developers. Its robust design reflects a careful balance between high switching speeds and low on resistance, making it an excellent candidate for high frequency applications such as synchronous rectification and power management. The transistor is particularly well suited for industrial environments, with a thermal rating that supports both extensive operational ranges and heavy duty cycling.
Optimised for high frequency switching
Pb free lead plating for compliance
Halogen free for environmental sustainability
MSL 1 classified for reliable assembly
Superior thermal efficiency with low on resistance
Excellent gate charge for Faster switching
Fully qualified per JEDEC standards
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