STMicroelectronics SuperMESH Type N-Channel MOSFET, 1 A, 800 V Enhancement, 3-Pin TO-252 STD1NK80ZT4

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SGD8.86

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SGD9.66

(inc. GST)

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Per Tape*
20 - 180SGD0.443SGD8.86
200 - 480SGD0.421SGD8.42
500 - 980SGD0.39SGD7.80
1000 - 1980SGD0.359SGD7.18
2000 +SGD0.346SGD6.92

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Packaging Options:
RS Stock No.:
151-905
Mfr. Part No.:
STD1NK80ZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

SuperMESH

Pin Count

3

Maximum Drain Source Resistance Rds

16Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

7.7nC

Maximum Power Dissipation Pd

45W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Gate charge minimized

Very low intrinsic capacitance

Zener-protected

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