STMicroelectronics SuperMESH N-Channel MOSFET, 1 A, 800 V Enhancement, 3-Pin TO-252 STD1NK80ZT4

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Subtotal (1 tape of 20 units)*

SGD14.96

(exc. GST)

SGD16.30

(inc. GST)

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Units
Per unit
Per Tape*
20 - 180SGD0.748SGD14.96
200 - 480SGD0.712SGD14.24
500 - 980SGD0.659SGD13.18
1000 - 1980SGD0.606SGD12.12
2000 +SGD0.584SGD11.68

*price indicative

Packaging Options:
RS Stock No.:
151-905
Mfr. Part No.:
STD1NK80ZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

SuperMESH

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

16Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Power Dissipation Pd

45W

Typical Gate Charge Qg @ Vgs

7.7nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Gate charge minimized

Very low intrinsic capacitance

Zener-protected

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