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STMicroelectronics SuperMESH N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4

RS Stock No.:: 151-440
Mfr. Part No.:: STD4NK60ZT4
Manufacturer:: STMicroelectronics

STMicroelectronics SuperMESH N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4

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Subtotal (1 tape of 20 units)*

SGD23.84

(exc. GST)

SGD25.98

(inc. GST)

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Units	Per unit	Per Tape*
20 - 180	SGD1.192	SGD23.84
200 - 480	SGD1.131	SGD22.62
500 - 980	SGD1.048	SGD20.96
1000 - 1980	SGD0.964	SGD19.28
2000 +	SGD0.928	SGD18.56

*price indicative

RS Stock No.:: 151-440
Mfr. Part No.:: STD4NK60ZT4
Manufacturer:: STMicroelectronics

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-252
	Series	SuperMESH
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	18.8nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.6V
	Maximum Operating Temperature	150°C
	Height	2.39mm
	Length	10.34mm
	Standards/Approvals	RoHS
	Width	6.73mm
	Automotive Standard	No

	Select all
	Brand STMicroelectronics
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-252
	Series SuperMESH
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 18.8nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.6V
	Maximum Operating Temperature 150°C
	Height 2.39mm
	Length 10.34mm
	Standards/Approvals RoHS
	Width 6.73mm
	Automotive Standard No

Datasheet - STD4NK60ZT4

The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

STMicroelectronics SuperMESH N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4

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