STMicroelectronics SuperMESH N-Channel MOSFET, 1 A, 800 V Enhancement, 3-Pin TO-252 STD1NK80ZT4

Subtotal (2500 units, on reels of 2500)*

SGD1,747.50

(exc. GST)

SGD1,905.00

(inc. GST)

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Units
Per unit
Per Reel*
2500 +SGD0.699SGD1,747.50

*price indicative

RS Stock No.:
151-904
Mfr. Part No.:
STD1NK80ZT4
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1A

Maximum Drain Source Voltage Vds

800V

Series

SuperMESH

Package Type

TO-252

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

16Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

7.7nC

Forward Voltage Vf

1.6V

Maximum Power Dissipation Pd

45W

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Gate charge minimized

Very low intrinsic capacitance

Zener-protected

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