STMicroelectronics STGD5NB120SZT4 IGBT, 10 A 1200 V, 3-Pin DPAK (TO-252), Surface Mount

This image is representative of the product range

View all IGBTs
Bulk discount available

Subtotal (1 pack of 5 units)*

SGD16.44

(exc. GST)

SGD17.92

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 6,920 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 10SGD3.288SGD16.44
15 - 20SGD3.166SGD15.83
25 +SGD2.966SGD14.83

*price indicative

Packaging Options:
RS Stock No.:
877-2879
Mfr. Part No.:
STGD5NB120SZT4
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

75 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

6.6 x 6.2 x 2.4mm

Energy Rating

12.68mJ

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Gate Capacitance

430pF

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics


For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links