STMicroelectronics STGB3NC120HDT4, Type N-Channel IGBT, 14 A 1200 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 151-939
- Mfr. Part No.:
- STGB3NC120HDT4
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Subtotal (1 reel of 1000 units)*
SGD2,159.00
(exc. GST)
SGD2,353.00
(inc. GST)
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- Shipping from 21 December 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | SGD2.159 | SGD2,159.00 |
*price indicative
- RS Stock No.:
- 151-939
- Mfr. Part No.:
- STGB3NC120HDT4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 14A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 75W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 15ns | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.8V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.4mm | |
| Length | 16mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 14A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 75W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 15ns | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.8V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.4mm | ||
Length 16mm | ||
Height 1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT shows an excellent trade off between low conduction losses and fast switching performance. It is designed in Power MESH technology combined with high voltage ultrafast diode.
High voltage capability
High speed
Very soft ultrafast recovery anti parallel diode
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