STMicroelectronics STGYA75H120DF2, Type N-Channel IGBT, 150 A 1200 V, 3-Pin Max247, Through Hole

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1 - 4SGD14.51
5 - 9SGD14.22
10 - 14SGD13.93
15 - 19SGD13.66
20 +SGD13.39

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Packaging Options:
RS Stock No.:
234-8894
Mfr. Part No.:
STGYA75H120DF2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

150A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

750W

Package Type

Max247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.6V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The STMicroelectronics IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C

5 μs of short-circuit withstand time

VCE(sat) = 2.1 V (typ.) @ IC = 75 A

Tight parameter distribution

Positive VCE(sat) temperature coefficient

Low thermal resistance

Very fast recovery antiparallel diode

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