STMicroelectronics STGB3NC120HDT4, N-Channel IGBT, 14 A 1.2 kV, 3-Pin TO-263, Surface
- RS Stock No.:
- 151-940
- Mfr. Part No.:
- STGB3NC120HDT4
- Manufacturer:
- STMicroelectronics
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Units | Per unit | Per Tape* | Saving |
|---|---|---|---|
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| 50 - 95 | SGD3.132 | SGD15.66 | 5% |
| 100 - 495 | SGD2.90 | SGD14.50 | 12% |
| 500 + | SGD2.67 | SGD13.35 | 19% |
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- RS Stock No.:
- 151-940
- Mfr. Part No.:
- STGB3NC120HDT4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 14A | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 75W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 15ns | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Length | 16mm | |
| Width | 4.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 14A | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 75W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 15ns | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Length 16mm | ||
Width 4.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT shows an excellent trade off between low conduction losses and fast switching performance. It is designed in Power MESH technology combined with high voltage ultrafast diode.
High voltage capability
High speed
Very soft ultrafast recovery anti parallel diode
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