onsemi HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS Stock No.:
- 807-6660
- Mfr. Part No.:
- HGT1S10N120BNST
- Manufacturer:
- onsemi
This image is representative of the product range
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Subtotal (1 pack of 2 units)*
SGD11.99
(exc. GST)
SGD13.07
(inc. GST)
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In Stock
- Plus 12 unit(s) shipping from 29 December 2025
- Plus 538 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD5.995 | SGD11.99 |
| 10 - 38 | SGD5.88 | SGD11.76 |
| 40 - 98 | SGD5.705 | SGD11.41 |
| 100 - 198 | SGD5.53 | SGD11.06 |
| 200 + | SGD5.36 | SGD10.72 |
*price indicative
- RS Stock No.:
- 807-6660
- Mfr. Part No.:
- HGT1S10N120BNST
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 298 W | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 10.67 x 11.33 x 4.83mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 298 W | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 10.67 x 11.33 x 4.83mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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