onsemi, Type N-Channel IGBT, 35 A 1200 V, 3-Pin TO-263, Surface

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Subtotal (1 reel of 800 units)*

SGD3,848.80

(exc. GST)

SGD4,195.20

(inc. GST)

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Per Reel*
800 +SGD4.811SGD3,848.80

*price indicative

RS Stock No.:
124-1406
Mfr. Part No.:
HGT1S10N120BNST
Manufacturer:
onsemi
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Brand

onsemi

Product Type

IGBT

Maximum Continuous Collector Current Ic

35A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

298W

Package Type

TO-263

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.45V

Maximum Operating Temperature

150°C

Series

NPT

Standards/Approvals

RoHS

Automotive Standard

No

Discrete IGBTs, 1000V and over, Fairchild Semiconductor


IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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