STMicroelectronics STGW30NC120HD IGBT, 60 A 1200 V, 3-Pin TO-247, Through Hole

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SGD12.24

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SGD13.34

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2 - 4SGD6.12SGD12.24
6 - 8SGD5.895SGD11.79
10 +SGD5.525SGD11.05

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Packaging Options:
RS Stock No.:
795-9136
Mfr. Part No.:
STGW30NC120HD
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

220 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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