STMicroelectronics STGF3NC120HD, Type N-Channel IGBT, 6 A 1200 V, 3-Pin TO-220, Through Hole

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Subtotal (1 pack of 5 units)*

SGD16.58

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SGD18.07

(inc. GST)

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Units
Per unit
Per Pack*
5 - 10SGD3.316SGD16.58
15 - 20SGD3.19SGD15.95
25 +SGD2.992SGD14.96

*price indicative

Packaging Options:
RS Stock No.:
795-9094
Mfr. Part No.:
STGF3NC120HD
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

6A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

25W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.8V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

4.6 mm

Height

16.4mm

Length

10.4mm

Automotive Standard

No

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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