Infineon BSC16DN25NS3GATMA1, Type N-Channel Single IGBT, 10.9 A, 8-Pin PG-TDSON-8, Through Hole
- RS Stock No.:
- 273-5239
- Mfr. Part No.:
- BSC16DN25NS3GATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 5000 units)*
SGD8,635.00
(exc. GST)
SGD9,410.00
(inc. GST)
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- Shipping from 18 May 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 10000 | SGD1.727 | SGD8,635.00 |
| 15000 - 20000 | SGD1.663 | SGD8,315.00 |
| 25000 + | SGD1.559 | SGD7,795.00 |
*price indicative
- RS Stock No.:
- 273-5239
- Mfr. Part No.:
- BSC16DN25NS3GATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 10.9A | |
| Product Type | IGBT | |
| Maximum Power Dissipation Pd | 62.5W | |
| Number of Transistors | 1 | |
| Package Type | PG-TDSON-8 | |
| Configuration | Single | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21 | |
| Height | 1.15mm | |
| Width | 6.1 mm | |
| Length | 5.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 10.9A | ||
Product Type IGBT | ||
Maximum Power Dissipation Pd 62.5W | ||
Number of Transistors 1 | ||
Package Type PG-TDSON-8 | ||
Configuration Single | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21 | ||
Height 1.15mm | ||
Width 6.1 mm | ||
Length 5.1mm | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel MOSFET with 150 degree Celsius operating temperature. It is an optimized for dc to dc conversion. This MOSFET is qualified according to JEDEC for target applications. This MOSFET is halogen free according to IEC61249 2 21 standard.
RoHS compliant
Pb free lead plating
Low on resistance
Excellent gate charge
Related links
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