Infineon ISC Type N-Channel MOSFET, 164 A, 100 V Enhancement, 8-Pin PG-TDSON-8 ISC035N10NM5LF2ATMA1
- RS Stock No.:
- 349-141
- Mfr. Part No.:
- ISC035N10NM5LF2ATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD13.40
(exc. GST)
SGD14.60
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 5,000 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | SGD6.70 | SGD13.40 |
| 20 - 198 | SGD6.03 | SGD12.06 |
| 200 - 998 | SGD5.56 | SGD11.12 |
| 1000 - 1998 | SGD5.16 | SGD10.32 |
| 2000 + | SGD4.625 | SGD9.25 |
*price indicative
- RS Stock No.:
- 349-141
- Mfr. Part No.:
- ISC035N10NM5LF2ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 164A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-TDSON-8 | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 217W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 164A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-TDSON-8 | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 217W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 5 Linear FET 2, 100 V is an N-channel, normal level MOSFET specifically designed for hot-swap, battery protection, and e-fuse applications. It features very low on resistance (RDS(on)), which helps minimize conduction losses, enhancing efficiency. The MOSFET also offers a wide safe operating area (SOA), ensuring reliable performance under a variety of operating conditions. These features make it an ideal choice for applications requiring robust, efficient, and reliable power management.
100% avalanche tested
Pb‑free lead plating and RoHS compliant
Halogen‑free according to IEC61249‑2‑21
Related links
- Infineon ISC Type N-Channel OptiMOST Power-MOSFET 30 V Enhancement, 8-Pin PG-TDSON-8
- Infineon ISC Type N-Channel N-Channel Mosfet 120 V Enhancement, 8-Pin PG-TDSON-8 ISC078N12NM6ATMA1
- Infineon ISC Type N-Channel Power Transistor 135 V Enhancement, 8-Pin PG-TDSON-8 ISC046N13NM6ATMA1
- Infineon ISC Type N-Channel Power Transistor 40 V Enhancement, 8-Pin PG-TDSON-8 ISCH42N04LM7ATMA1
- Infineon ISC Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC110N12NM6ATMA1
- Infineon ISC Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TDSON-8 ISC320N12LM6ATMA1
- Infineon ISC Type N-Channel Power Transistor 200 V Enhancement, 8-Pin PG-TDSON-8 FL ISC151N20NM6ATMA1
- Infineon ISC Type N-Channel Power Transistor 120 V Enhancement, 8-Pin PG-TDSON-8 FL ISC032N12LM6ATMA1