Infineon BSC018NE2LSATMA1, Type N-Channel IGBT, 153 A 25 V, 8-Pin PG-TDSON-8, Through Hole

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Subtotal (1 reel of 5000 units)*

SGD4,625.00

(exc. GST)

SGD5,040.00

(inc. GST)

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Units
Per unit
Per Reel*
5000 - 10000SGD0.925SGD4,625.00
15000 - 20000SGD0.89SGD4,450.00
25000 +SGD0.835SGD4,175.00

*price indicative

RS Stock No.:
273-5233
Mfr. Part No.:
BSC018NE2LSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT

Maximum Continuous Collector Current Ic

153A

Maximum Collector Emitter Voltage Vceo

25V

Number of Transistors

1

Maximum Power Dissipation Pd

2.5W

Package Type

PG-TDSON-8

Mount Type

Through Hole

Channel Type

Type N

Pin Count

8

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC61249-2-21

Height

1.51mm

Length

5.1mm

Width

6.1 mm

Automotive Standard

No

The Infineon MOSFET is a 25 V N channel MOSFET. It is optimized for high performance buck converter. This MOSFET is qualified according to JEDEC for target applications. This MOSFET is halogen free according to IEC61249 2 21 standard.

RoHS compliant

Pb free lead plating

Very low on resistance

Superior thermal resistance

100 percent avalanche tested

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