Infineon Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis

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Subtotal (1 tray of 3 units)*

SGD2,066.76

(exc. GST)

SGD2,252.76

(inc. GST)

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  • Plus 3 unit(s) shipping from 29 June 2026
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Units
Per unit
Per Tray*
3 +SGD688.92SGD2,066.76

*price indicative

RS Stock No.:
260-8891
Mfr. Part No.:
FF600R12IP4BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

600A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

20mW

Number of Transistors

2

Package Type

AG-PRIME2

Configuration

Dual

Mount Type

Chassis

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Collector Emitter Saturation Voltage VceSAT

2.55V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon PrimePACK 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP IGBT4, emitter controlled 4 diode, NTC and soft switching chip, also available with thermal interface material. High short circuit capability, self limiting short circuit current, VCEsat with positive temperature coefficient.

Extended operation temperature

High DC stability

High power density

Standardized housing

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