Infineon Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis
- RS Stock No.:
- 260-8889
- Mfr. Part No.:
- FF600R12IE4BOSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 tray of 3 units)*
SGD2,084.70
(exc. GST)
SGD2,272.32
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 6 unit(s) shipping from 23 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 3 + | SGD694.90 | SGD2,084.70 |
*price indicative
- RS Stock No.:
- 260-8889
- Mfr. Part No.:
- FF600R12IE4BOSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 600A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 3.35kW | |
| Package Type | AG-PRIME2 | |
| Configuration | Dual | |
| Mount Type | Chassis | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 600A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 3.35kW | ||
Package Type AG-PRIME2 | ||
Configuration Dual | ||
Mount Type Chassis | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon PrimePACK 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP IGBT4, emitter controlled 4 diode, NTC and fast switching chip. High short circuit capability, self limiting short circuit current, VCEsat with positive temperature coefficient.
Extended operation temperature
High DC stability
High power density
Standardized housing
Related links
- Infineon Dual IGBT Chassis
- Infineon FF600R12IE4BOSA1 Dual IGBT Chassis
- Infineon FF600R12IP4BOSA1 Dual IGBT Chassis
- Infineon Dual IGBT Chassis
- Infineon FF600R12ME7BPSA1 600 A 1200 V AG-ECONOD, Through Hole
- Infineon FF50R12RT4HOSA1 Dual IGBT Chassis
- Infineon 600 A 1200 V Surface
- Infineon FF600R12KE4BOSA1 600 A 1200 V Surface
