Infineon FF600R12IP4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis
- RS Stock No.:
- 260-8893
- Mfr. Part No.:
- FF600R12IP4BOSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD548.13
(exc. GST)
SGD597.46
(inc. GST)
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Temporarily out of stock
- 3 unit(s) shipping from 25 June 2026
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Units | Per unit |
|---|---|
| 1 - 1 | SGD548.13 |
| 2 + | SGD548.07 |
*price indicative
- RS Stock No.:
- 260-8893
- Mfr. Part No.:
- FF600R12IP4BOSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 600A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 2 | |
| Package Type | AG-PRIME2 | |
| Configuration | Dual | |
| Mount Type | Chassis | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.55V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 600A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 2 | ||
Package Type AG-PRIME2 | ||
Configuration Dual | ||
Mount Type Chassis | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.55V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon PrimePACK 2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP IGBT4, emitter controlled 4 diode, NTC and soft switching chip, also available with thermal interface material. High short circuit capability, self limiting short circuit current, VCEsat with positive temperature coefficient.
Extended operation temperature
High DC stability
High power density
Standardized housing
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