Bourns IGBT, 100 A 650 V TO-247
- RS Stock No.:
- 253-3508
- Mfr. Part No.:
- BIDW50N65T
- Manufacturer:
- Bourns
This image is representative of the product range
Subtotal (1 tube of 600 units)*
SGD2,710.80
(exc. GST)
SGD2,955.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 600 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 600 + | SGD4.518 | SGD2,710.80 |
*price indicative
- RS Stock No.:
- 253-3508
- Mfr. Part No.:
- BIDW50N65T
- Manufacturer:
- Bourns
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Bourns | |
| Maximum Continuous Collector Current Ic | 100A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Package Type | TO-247 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V (Gate-Emitter Voltage VGE ) | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Bourns | ||
Maximum Continuous Collector Current Ic 100A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Package Type TO-247 | ||
Maximum Gate Emitter Voltage VGEO ±20 V (Gate-Emitter Voltage VGE ) | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).
650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant
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