onsemi FGHL50T65SQDT, Type N-Channel IGBT, 100 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 202-5677
- Mfr. Part No.:
- FGHL50T65SQDT
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD73.89
(exc. GST)
SGD80.54
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 230 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD7.389 | SGD73.89 |
| 50 - 90 | SGD6.089 | SGD60.89 |
| 100 - 190 | SGD5.481 | SGD54.81 |
| 200 + | SGD4.981 | SGD49.81 |
*price indicative
- RS Stock No.:
- 202-5677
- Mfr. Part No.:
- FGHL50T65SQDT
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 100A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 134W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.47V | |
| Maximum Gate Emitter Voltage VGEO | ±3 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | This Device is Pb-Free and is RoHS | |
| Series | FGHL50T65SQDT | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 100A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 134W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.47V | ||
Maximum Gate Emitter Voltage VGEO ±3 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals This Device is Pb-Free and is RoHS | ||
Series FGHL50T65SQDT | ||
Automotive Standard No | ||
The ON Semiconductor IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
175°C maximum junction temperature
High current capability
High input impedance
Fast switching
Tighten parameter distribution
Pb free and is RoHS compliant
Related links
- onsemi FGHL50T65SQDT IGBT 3-Pin TO-247
- onsemi AFGY100T65SPD IGBT 3-Pin TO-247
- onsemi FGHL50T65SQ IGBT 3-Pin TO-247, Through Hole
- onsemi AFGHL50T65SQDC NPN Bipolar Transistor 650 V, 3-Pin TO-247
- onsemi AFGHL50T65SQD IGBT 3-Pin TO-247
- Infineon IKZ75N65EL5XKSA1 100 A 650 V Through Hole
- onsemi AFGHL75T65SQ IGBT 3-Pin TO-247
- onsemi AFGHL75T65SQDC IGBT 3-Pin TO-247
