Bourns BIDW50N65T IGBT, 100 A 650 V TO-247

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Subtotal (1 pack of 2 units)*

SGD10.01

(exc. GST)

SGD10.91

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8SGD5.005SGD10.01
10 - 48SGD4.49SGD8.98
50 - 98SGD4.24SGD8.48
100 - 248SGD3.69SGD7.38
250 +SGD3.61SGD7.22

*price indicative

Packaging Options:
RS Stock No.:
253-3509
Mfr. Part No.:
BIDW50N65T
Manufacturer:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current Ic

100A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Package Type

TO-247

Maximum Gate Emitter Voltage VGEO

±20 V (Gate-Emitter Voltage VGE )

Maximum Collector Emitter Saturation Voltage VceSAT

1.65V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure provides a lower thermal resistance R(th).

650 V, 50 A, Low Collector-Emitter Saturation Voltage (VCE(sat))

Trench-Gate Field-Stop technology

Optimized for conduction

RoHS compliant

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