Bourns BIDNW30N60H3 IGBT, 30 A 600 V TO-247
- RS Stock No.:
- 253-3503
- Mfr. Part No.:
- BIDNW30N60H3
- Manufacturer:
- Bourns
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD10.51
(exc. GST)
SGD11.456
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD5.255 | SGD10.51 |
| 10 - 48 | SGD4.735 | SGD9.47 |
| 50 - 98 | SGD4.455 | SGD8.91 |
| 100 - 248 | SGD3.88 | SGD7.76 |
| 250 + | SGD3.80 | SGD7.60 |
*price indicative
- RS Stock No.:
- 253-3503
- Mfr. Part No.:
- BIDNW30N60H3
- Manufacturer:
- Bourns
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Bourns | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 230W | |
| Package Type | TO-247 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Series | BIDNW30N60H3 | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Bourns | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 230W | ||
Package Type TO-247 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Series BIDNW30N60H3 | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.
600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Low switching loss
Fast switching
RoHS compliant
Related links
- Bourns BIDNW30N60H3 Single Diode IGBT, 30 A 600 V TO-247N
- Bourns BIDW30N60T Single Diode IGBT, 30 A 600 V TO-247
- Bourns BIDW20N60T Single Diode IGBT, 20 A 600 V TO-247
- Bourns BIDD05N60T Single Diode IGBT, 5 A 600 V TO-252
- Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
- ROHM RGS30TSX2DHRC11 Single IGBT 3-Pin TO-247N
- ROHM RGS30TSX2DGC11 Single IGBT 3-Pin TO-247N
- ROHM RGS30TSX2GC11 Single IGBT 3-Pin TO-247N