Bourns BIDNW30N60H3 Single Diode IGBT, 30 A 600 V TO-247N

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Subtotal (1 pack of 2 units)*

SGD10.51

(exc. GST)

SGD11.456

(inc. GST)

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  • 2,294 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8SGD5.255SGD10.51
10 - 48SGD4.735SGD9.47
50 - 98SGD4.455SGD8.91
100 - 248SGD3.88SGD7.76
250 +SGD3.80SGD7.60

*price indicative

Packaging Options:
RS Stock No.:
253-3503
Mfr. Part No.:
BIDNW30N60H3
Manufacturer:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

230 W

Number of Transistors

1

Configuration

Single Diode

Package Type

TO-247N

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.

600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Low switching loss
Fast switching
RoHS compliant

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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