Bourns IGBT, 60 A 600 V, 3-Pin TO-247

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Subtotal (1 tube of 600 units)*

SGD2,101.80

(exc. GST)

SGD2,290.80

(inc. GST)

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Units
Per unit
Per Tube*
600 +SGD3.503SGD2,101.80

*price indicative

RS Stock No.:
253-3506
Mfr. Part No.:
BIDW30N60T
Manufacturer:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current Ic

60A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

230W

Package Type

TO-247

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.9V

Maximum Operating Temperature

150°C

Series

BIDW30N60T

Standards/Approvals

RoHS 2015/863, 2015 and Annex, Mar 31

Automotive Standard

No

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure gives a lower thermal resistance R(th).

600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))

Trench-Gate Field-Stop technology

Optimized for conduction

RoHS compliant

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