Bourns BIDW30N60T Single Diode IGBT, 30 A 600 V TO-247

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Subtotal (1 pack of 2 units)*

SGD11.27

(exc. GST)

SGD12.284

(inc. GST)

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  • 1,748 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8SGD5.635SGD11.27
10 - 48SGD5.07SGD10.14
50 - 98SGD4.78SGD9.56
100 - 248SGD4.16SGD8.32
250 +SGD4.075SGD8.15

*price indicative

Packaging Options:
RS Stock No.:
253-3507
Mfr. Part No.:
BIDW30N60T
Manufacturer:
Bourns
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Brand

Bourns

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

230 W

Number of Transistors

1

Package Type

TO-247

Configuration

Single Diode

The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure gives a lower thermal resistance R(th).

600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
RoHS compliant

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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